Lam Research Corp. (Nasdaq: LRCX) at present prolonged its management in 3D NAND flash reminiscence etching with the introduction of Lam Cryo™ 3.0, the third era of the firm’s production-proven cryogenic dielectric etch expertise. As the proliferation of generative synthetic intelligence (AI) continues to propel the demand for reminiscence with larger capability and efficiency, Lam Cryo 3.0 offers etch capabilities vital for the manufacturing of future modern 3D NAND. Leveraging ultra-cold temperatures, high-power confined plasma reactor expertise, and improvements in floor chemistry, Lam Cryo 3.0 etches with industry-leading precision and profile management.
“Lam Cryo 3.0 paves the way for customers on the path to 1,000-layer 3D NAND,” mentioned Sesha Varadarajan, senior vp of World Merchandise Group at Lam Research. “With five million wafers already manufactured using Lam cryogenic etch, our newest technology is a breakthrough in 3D NAND production. It creates high aspect ratio (HAR) features with angstrom-level precision, while delivering lower environmental impact and more than double the etch rate of conventional dielectric processes. Lam Cryo 3.0 is the etch technology our customers need to overcome the AI era’s key NAND manufacturing hurdles.”
Up to now, 3D NAND has primarily superior by way of the stacking of vertical layers of reminiscence cells, that are enabled by etching deep and slender HAR reminiscence channels. Slight, atomic-scale deviations from the goal profile of these options can negatively have an effect on electrical properties of the die and probably impression yield. Lam Cryo 3.0 is optimized to tackle these and different etch challenges to scaling.
“AI is driving exponential demand in capacity and on the performance of flash memory both at the cloud and the edge. This is compelling chipmakers to scale NAND flash in the race to achieve 1000-layer 3D NAND by the end of 2030,” mentioned Neil Shah, co-founder and vp of analysis at Counterpoint Research. “Lam Cryo 3.0 cryogenic etch technology is a significant leap beyond conventional techniques. It etches memory channels that are more than 50 times deeper than their width with near-perfect precision and control, achieving a profile deviation of less than 0.1%. This breakthrough significantly enhances advanced 3D NAND yields and overall performance to enable chipmakers to compete well in the AI era.”
The Business’s Most Superior Cryogenic Etch Technology
Lam Cryo 3.0 makes use of the firm’s distinctive, high-powered confined plasma reactors, course of enhancements and temperatures effectively under -0oC, which enable the harnessing of new, novel etch chemistries. When mixed with the scalable, pulsed plasma expertise of Lam’s newest Vantex® dielectric system, etch depth and profile management is considerably elevated. Utilizing Lam Cryo 3.0 expertise, 3D NAND producers can etch reminiscence channels with depths of up to 10 microns with lower than 0.1% deviation* in the function’s vital dimension from the high to the backside.
Different highlights embody:
Excellent Productiveness: In contrast to typical dielectric processes, Lam Cryo 3.0 etches two-and-a-half instances quicker, with higher wafer-to-wafer repeatability, serving to 3D NAND producers to obtain excessive yield at decrease value.
Increased Sustainability: Lam Cryo gives 40% discount in power consumption per wafer, and up to a 90% discount in emissions in contrast to typical etch processes.**
Maximize Tools Funding: For the optimum profile management and the quickest and deepest dielectric etch, Lam Cryo 3.0 will be built-in into Lam’s latest Vantex system. It is usually suitable with the firm’s portfolio of Flex® HAR dielectric etchers, utilized by all main reminiscence producers for 3D NAND mass manufacturing.
Main 3D NAND Dielectric Etching
Lam Cryo 3.0 additional extends to the firm’s two-decade management in wafer fabrication etch applied sciences, which incorporates seven generations of 3D NAND. Lam launched the world’s first cryogenic etch providing into quantity manufacturing in 2019. Of the over 7,500 Lam HAR dielectric etch chambers utilized in NAND manufacturing at present, almost 1,000 of them use cryogenic etch expertise.
Lam Cryo 3.0 is now out there to main reminiscence producers. It’s the newest addition to Lam’s broad portfolio of etch, deposition and clear options for 3D NAND manufacturing. Be taught extra about Lam Cryo 3.0.
